PHT4NQ10T,135


PHT4NQ10T,135

Part NumberPHT4NQ10T,135

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PHT4NQ10T,135 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerNexperia USA Inc.
SeriesTrenchMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 1.75A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
FET Feature-
Power Dissipation (Max)6.9W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-73
Package / CaseTO-261-4, TO-261AA

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