Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2315BDS-T1-GE3

SI2315BDS-T1-GE3

SI2315BDS-T1-GE3

Part NumberSI2315BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 3A SOT23-3

DatasheetSI2315BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount

To learn about the specification of SI2315BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2315BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2315BDS-T1-GE3.
We are offering SI2315BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2315BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2315BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	715pF @ 6V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2315BDS-T1-GE3 - Related Products

	FDMS4435BZ	ON Semiconductor, P-Channel 30V 9A (Ta), 18A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SI2319DDS-T1-GE3	Vishay Siliconix, P-Channel 40V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET® Gen III	View
	DMP10H4D2S-7	Diodes Incorporated, P-Channel 100V 270mA (Ta) 380mW (Ta) Surface Mount SOT-23,	View
	BSH202,215	Nexperia USA Inc., P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	FDS9400A	ON Semiconductor, P-Channel 30V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SSM3J351R,LF	Toshiba Semiconductor and Storage, P-Channel 60V 3.5A (Ta) 2W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SI2301BDS-T1-E3	Vishay Siliconix, P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IRFR9220TRLPBF	Vishay Siliconix, P-Channel 200V 3.6A (Tc) 42W (Tc) Surface Mount,	View
	SI1443EDH-T1-GE3	Vishay Siliconix, P-Channel 30V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount, TrenchFET®	View
	DMP2008UFG-13	Diodes Incorporated, P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8,	View
	IRLMS6702TRPBF	Infineon Technologies, P-Channel 20V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	SIA817EDJ-T1-GE3	Vishay Siliconix, P-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual, LITTLE FOOT®	View

SI2315BDS-T1-GE3 - Tags

SI2315BDS-T1-GE3 SI2315BDS-T1-GE3 PDF SI2315BDS-T1-GE3 datasheet SI2315BDS-T1-GE3 specification SI2315BDS-T1-GE3 image SI2315BDS-T1-GE3 India Renesas Electronics India SI2315BDS-T1-GE3 buy SI2315BDS-T1-GE3 SI2315BDS-T1-GE3 price SI2315BDS-T1-GE3 distributor SI2315BDS-T1-GE3 supplier SI2315BDS-T1-GE3 wholesales