SI1013X-T1-GE3
SI1013X-T1-GE3
Part Number SI1013X-T1-GE3 Description MOSFET P-CH 20V 350MA SC89-3 Package / Case SC-89, SOT-490Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 350mA (Ta) 250mW (Ta) Surface Mount SC-89-3
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SI1013X-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si1013R,X Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Vgs (Max) ±6V FET Feature - Power Dissipation (Max) 250mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-3 Package / Case SC-89, SOT-490
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