SI1902CDL-T1-GE3


SI1902CDL-T1-GE3

Part NumberSI1902CDL-T1-GE3

Manufacturer

Description

Datasheet

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI1902CDL-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.1A
Rds On (Max) @ Id, Vgs235mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds62pF @ 10V
Power - Max420mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6 (SOT-363)

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SI1902CDL-T1-GE3 - Tags

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