DMN2014LHAB-7

Part NumberDMN2014LHAB-7

ManufacturerDiodes Incorporated

DescriptionMOSFET 2N-CH 20V 9A 6-UDFN

DatasheetDMN2014LHAB-7

Package / Case6-UFDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 20V 9A 800mW Surface Mount U-DFN2030-6 (Type B)

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DMN2014LHAB-7 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	DMN2014LHAB-7
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	9A
Rds On (Max) @ Id, Vgs	13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1550pF @ 10V
Power - Max	800mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UFDFN Exposed Pad
Supplier Device Package	U-DFN2030-6 (Type B)

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