SI1499DH-T1-GE3
SI1499DH-T1-GE3
Part Number SI1499DH-T1-GE3 Description MOSFET P-CH 8V 1.6A SC-70-6 Package / Case 6-TSSOP, SC-88, SOT-363Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 8V 1.6A (Tc) 2.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363)
To learn about the specification of SI1499DH-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI1499DH-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI1499DH-T1-GE3.
We are offering SI1499DH-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI1499DH-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1499DH Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 78mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 4V FET Feature - Power Dissipation (Max) 2.5W (Ta), 2.78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-6 (SOT-363) Package / Case 6-TSSOP, SC-88, SOT-363
SI1499DH-T1-GE3 - Related ProductsMore >>
SQ4483EY-T1_GE3 Vishay Siliconix, P-Channel 30V 30A (Tc) 7W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®
View
SSM3J130TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 4.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
ECH8310-TL-H ON Semiconductor, P-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount 8-ECH,
View
DMP2123L-7 Diodes Incorporated, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,
View
SI8823EDB-T2-E1 Vishay Siliconix, P-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8), TrenchFET® Gen III
View
MIC94053YC6-TR Microchip Technology, P-Channel 6V 2A (Ta) 270mW (Ta) Surface Mount SC-70-6,
View
BSO301SPHXUMA1 Infineon Technologies, P-Channel 30V 12.6A (Ta) 1.79W (Ta) Surface Mount PG-DSO-8, OptiMOS™
View
PMV33UPE,215 Nexperia USA Inc., P-Channel 20V 4.4A (Ta) 490mW (Ta) Surface Mount TO-236AB,
View
SI6423DQ-T1-E3 Vishay Siliconix, P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP, TrenchFET®
View
BSS84LT1G ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
TSM3443CX6 RFG Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Ta) 2W (Ta) Surface Mount SOT-26,
View
SSM3J145TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
SI1499DH-T1-GE3 - Tags
English
