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SI1302DL-T1-GE3

SI1302DL-T1-GE3

Part NumberSI1302DL-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 600MA SC-70-3

DatasheetSI1302DL

Package / CaseSC-70, SOT-323

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

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SI1302DL-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI1302DL
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	480mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	280mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-3
Package / Case	SC-70, SOT-323

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