RSJ650N10TL


RSJ650N10TL

Part NumberRSJ650N10TL

Manufacturer

Description

Datasheet

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RSJ650N10TL - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C65A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs9.1mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10780pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLPTS
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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