RSJ650N10TL

Part NumberRSJ650N10TL

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RSJ650N10
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	65A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	9.1mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10780pF @ 25V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LPTS
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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