RS1G260MNTB
RS1G260MNTB
Part Number RS1G260MNTB Description MOSFET N-CH 40V 26A 8HSOP Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 26A (Ta) 3W (Ta), 35W (Tc) Surface Mount 8-HSOP
To learn about the specification of RS1G260MNTB, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RS1G260MNTB with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RS1G260MNTB.
We are offering RS1G260MNTB for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
RS1G260MNTB - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RS1G260MN Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 26A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.3mOhm @ 26A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2988pF @ 20V FET Feature - Power Dissipation (Max) 3W (Ta), 35W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSOP Package / Case 8-PowerTDFN
RS1G260MNTB - Related ProductsMore >>
IPU80R1K2P7AKMA1 Infineon Technologies, N-Channel 800V 4.5A (Tc) 37W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
View
MMBF170Q-7-F Diodes Incorporated, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
VN10KN3-G-P002 Microchip Technology, N-Channel 60V 310mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
RD3L050SNFRATL Rohm Semiconductor, N-Channel 60V 5A (Ta) 15W (Ta) Surface Mount TO-252, Automotive, AEC-Q101
View
IXTH30N60L2 IXYS, N-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-247 (IXTH), Linear L2™
View
SSM3K318R,LF Toshiba Semiconductor and Storage, N-Channel 60V 2.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIV
View
IPA80R310CEXKSA2 Infineon Technologies, N-Channel 800V 16.7A (Tc) 35W (Tc) Through Hole PG-TO220-FP, CoolMOS™
View
SISS64DN-T1-GE3 Vishay Siliconix, N-Channel 30V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV
View
NVTA7002NT1G ON Semiconductor, N-Channel 30V 154mA (Tj) 300mW (Tj) Surface Mount SC-75,
View
2SK3564(STA4,Q,M) Toshiba Semiconductor and Storage, N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS, π-MOSIV
View
FQA140N10 ON Semiconductor, N-Channel 100V 140A (Tc) 375W (Tc) Through Hole TO-3PN, QFET®
View
BS270-D74Z ON Semiconductor, N-Channel 60V 400mA (Ta) 625mW (Ta) Through Hole TO-92-3,
View
RS1G260MNTB - Tags
English
