Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RQ3E130MNTB1

RQ3E130MNTB1

RQ3E130MNTB1

Part NumberRQ3E130MNTB1

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 30V 13A HSMT8

DatasheetRQ3E130MN Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

To learn about the specification of RQ3E130MNTB1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RQ3E130MNTB1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RQ3E130MNTB1.
We are offering RQ3E130MNTB1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RQ3E130MNTB1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RQ3E130MN Datasheet
Standard Package	3000
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.1mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 15V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN

RQ3E130MNTB1 - Related Products

	IRFB3207ZGPBF	Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®	View
	FDL100N50F	ON Semiconductor, N-Channel 500V 100A (Tc) 2500W (Tc) Through Hole TO-264-3, UniFET™	View
	FDD6630A	ON Semiconductor, N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-252, PowerTrench®	View
	NTD4970N-35G	ON Semiconductor, N-Channel 30V 8.5A (Ta), 36A (Tc) 1.38W (Ta), 24.6W (Tc) Through Hole I-PAK,	View
	FQD10N20LTM	ON Semiconductor, N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak), QFET®	View
	STV270N4F3	STMicroelectronics, N-Channel 40V 270A (Tc) 300W (Tc) Surface Mount 10-PowerSO, STripFET™ III	View
	BSS127SSN-7	Diodes Incorporated, N-Channel 600V 50mA (Ta) 610mW (Ta) Surface Mount SC-59,	View
	DMN61D9UW-7	Diodes Incorporated, N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323,	View
	SQS482EN-T1_GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	BUK763R9-60E,118	Nexperia USA Inc., N-Channel 60V 100A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	TSM020N04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 170A (Tc) 104W (Tc) Surface Mount 8-PDFN (5x6),	View
	IRLI2910PBF	Infineon Technologies, N-Channel 100V 31A (Tc) 63W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View

RQ3E130MNTB1 - Tags

RQ3E130MNTB1 RQ3E130MNTB1 PDF RQ3E130MNTB1 datasheet RQ3E130MNTB1 specification RQ3E130MNTB1 image RQ3E130MNTB1 India Renesas Electronics India RQ3E130MNTB1 buy RQ3E130MNTB1 RQ3E130MNTB1 price RQ3E130MNTB1 distributor RQ3E130MNTB1 supplier RQ3E130MNTB1 wholesales