IPC50N04S55R8ATMA1
IPC50N04S55R8ATMA1
Part Number IPC50N04S55R8ATMA1
Description MOSFET N-CHANNEL 40V 50A 8TDSON
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 50A (Tc) 42W (Tc) Surface Mount PG-TDSON-8-33
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IPC50N04S55R8ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPC50N04S5-5R8
Standard Package 5000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-33
Package / Case 8-PowerTDFN
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