Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RQ1C065UNTR

RQ1C065UNTR

RQ1C065UNTR

Part NumberRQ1C065UNTR

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 20V 6.5A TSMT8

DatasheetRQ1C065UN

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 6.5A (Ta) 700mW (Ta) Surface Mount TSMT8

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RQ1C065UNTR - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RQ1C065UN
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 10V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSMT8
Package / Case	8-SMD, Flat Lead

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