RQ1C065UNTR
RQ1C065UNTR
Part Number RQ1C065UNTR Description MOSFET N-CH 20V 6.5A TSMT8 Package / Case 8-SMD, Flat LeadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 6.5A (Ta) 700mW (Ta) Surface Mount TSMT8
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RQ1C065UNTR - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RQ1C065UN Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 22mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT8 Package / Case 8-SMD, Flat Lead
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