Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGT50NS65D
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	48A
Current - Collector Pulsed (Icm)	75A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 25A
Power - Max	194W
Switching Energy	-
Input Type	Standard
Gate Charge	49nC
Td (on/off) @ 25°C	27ns/88ns
Test Condition	400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)	58ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	LPDS

IGB30N60H3ATMA1	Infineon Technologies, IGBT Trench Field Stop 600V 60A 187W Surface Mount PG-TO263-3, TrenchStop®	View
STGW40H60DLFB	STMicroelectronics, IGBT Trench Field Stop 600V 80A 283W Through Hole TO-247,	View
IRG4PH50UDPBF	Infineon Technologies, IGBT 1200V 45A 200W Through Hole TO-247AC,	View
STGB30H60DLFB	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK,	View
IRG4PSC71KDPBF	Infineon Technologies, IGBT 600V 85A 350W Through Hole SUPER-247™ (TO-274AA),	View
IRG4BC40W-SPBF	Infineon Technologies, IGBT 600V 40A 160W Surface Mount D2PAK,	View
STGW30V60F	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Through Hole TO-247,	View
FGD3N60LSDTM	ON Semiconductor, IGBT 600V 6A 40W Surface Mount D-Pak,	View
RGT16NL65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 16A 94W Surface Mount LPDS,	View
IXBK55N300	IXYS, IGBT 3000V 130A 625W Through Hole TO-264, BIMOSFET™	View
STGWT30H65FB	STMicroelectronics, IGBT Trench Field Stop 650V 30A 260W Through Hole TO-3P,	View
HGTP12N60A4D	ON Semiconductor, IGBT 600V 54A 167W Through Hole TO-220-3,	View

RGT50NS65DGTL

Part NumberRGT50NS65DGTL