Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGT50NS65D
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	48A
Current - Collector Pulsed (Icm)	75A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 25A
Power - Max	194W
Switching Energy	-
Input Type	Standard
Gate Charge	49nC
Td (on/off) @ 25°C	27ns/88ns
Test Condition	400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)	58ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	LPDS

IXXX110N65B4H1	IXYS, IGBT PT 650V 240A 880W Through Hole PLUS247™-3, GenX4™, XPT™	View
STGFW40H65FB	STMicroelectronics, IGBT Trench Field Stop 650V 80A 62.5W Through Hole TO-3PF-3,	View
IXYH16N170C	IXYS, IGBT 1700V 40A 310W Through Hole TO-247 (IXYH), XPT™	View
IXXH110N65C4	IXYS, IGBT PT 650V 234A 880W Through Hole TO-247 (IXXH), GenX4™, XPT™	View
APT33GF120B2RDQ2G	Microsemi Corporation, IGBT NPT 1200V 64A 357W Through Hole,	View
APT25GR120B	Microsemi Corporation, IGBT NPT 1200V 75A 521W Through Hole TO-247,	View
NGTG15N60S1EG	ON Semiconductor, IGBT NPT 600V 30A 117W Through Hole TO-220,	View
APT45GP120B2DQ2G	Microsemi Corporation, IGBT PT 1200V 113A 625W Through Hole, POWER MOS 7®	View
APT64GA90B2D30	Microsemi Corporation, IGBT PT 900V 117A 500W Through Hole, POWER MOS 8™	View
HGTD7N60C3S9A	ON Semiconductor, IGBT 600V 14A 60W Surface Mount TO-252AA,	View
IXXK160N65B4	IXYS, IGBT PT 650V 310A 940W Through Hole TO-264 (IXXK), GenX4™, XPT™	View
FGH75T65SQDTL4	ON Semiconductor, IGBT Trench Field Stop 650V 150A Through Hole TO-247,	View

RGT50NS65DGTL

Part NumberRGT50NS65DGTL