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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RFD3055LE/LESM, RFP3055LE
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 107mOhm @ 8A, 5V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRL3713STRLPBF
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STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
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Vishay Siliconix, N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®
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Diodes Incorporated, N-Channel 100V 11.8A (Ta), 123A (Tc) 1.5W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101
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