Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RFD12N06RLESM9A

RFD12N06RLESM9A

RFD12N06RLESM9A

Part NumberRFD12N06RLESM9A

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 18A DPAK

DatasheetRFD12N06RLESM

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA

To learn about the specification of RFD12N06RLESM9A, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RFD12N06RLESM9A with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RFD12N06RLESM9A.
We are offering RFD12N06RLESM9A for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RFD12N06RLESM9A - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RFD12N06RLESM
Standard Package	2500
Manufacturer	ON Semiconductor
Series	UltraFET™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	485pF @ 25V
FET Feature	-
Power Dissipation (Max)	49W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

RFD12N06RLESM9A - Related Products

	SUP50010E-GE3	Vishay Siliconix, N-Channel 60V 150A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®	View
	FQP70N10	ON Semiconductor, N-Channel 100V 57A (Tc) 160W (Tc) Through Hole TO-220-3, QFET®	View
	RUM003N02T2L	Rohm Semiconductor, N-Channel 20V 300mA (Ta) 150mW (Ta) Surface Mount VMT3,	View
	TSM110NB04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),	View
	SIHH11N60EF-T1-GE3	Vishay Siliconix, N-Channel 600V 11A (Tc) 114W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	IRF8707TRPBF	Infineon Technologies, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IRF3205LPBF	Infineon Technologies, N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-262, HEXFET®	View
	DMN10H120SE-13	Diodes Incorporated, N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223,	View
	SSM6K361NU,LF	Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVIII-H	View
	SUM70030E-GE3	Vishay Siliconix, N-Channel 100V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), TrenchFET®	View
	STS8N6LF6AG	STMicroelectronics, N-Channel 60V 8A (Ta) 3.2W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101, STripFET™ F6	View
	FDS6670A	ON Semiconductor, N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View

RFD12N06RLESM9A - Tags

RFD12N06RLESM9A RFD12N06RLESM9A PDF RFD12N06RLESM9A datasheet RFD12N06RLESM9A specification RFD12N06RLESM9A image RFD12N06RLESM9A India Renesas Electronics India RFD12N06RLESM9A buy RFD12N06RLESM9A RFD12N06RLESM9A price RFD12N06RLESM9A distributor RFD12N06RLESM9A supplier RFD12N06RLESM9A wholesales