RF4E110BNTR
RF4E110BNTR
Part Number RF4E110BNTR Description MOSFET N-CH 30V 11A 8-HUML Package / Case 8-PowerUDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8
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RF4E110BNTR - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RF4E110BN Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11.1mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package HUML2020L8 Package / Case 8-PowerUDFN
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