RFP12N10L
RFP12N10L
Part Number RFP12N10L
Description MOSFET N-CH 100V 12A TO-220AB
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 12A (Tc) 60W (Tc) Through Hole TO-220-3
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RFP12N10L - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RFP12N10L
Standard Package 800
Manufacturer ON Semiconductor
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 200mOhm @ 12A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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