R6030KNZC8
R6030KNZC8
Part Number R6030KNZC8 Description MOSFET N-CHANNEL 600V 30A TO3PF Package / Case TO-3P-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-3PF
To learn about the specification of R6030KNZC8, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add R6030KNZC8 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of R6030KNZC8.
We are offering R6030KNZC8 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
R6030KNZC8 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6030KNZ Standard Package 30 Manufacturer Rohm Semiconductor Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 25V FET Feature - Power Dissipation (Max) 86W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack
R6030KNZC8 - Related ProductsMore >>
IRFR024NTRPBF Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®
View
DMN63D8L-7 Diodes Incorporated, N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23,
View
IRLR2703TRPBF Infineon Technologies, N-Channel 30V 23A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®
View
DMT6005LSS-13 Diodes Incorporated, N-Channel 60V 13.5A (Ta) 1.3W (Ta) Surface Mount 8-SO,
View
TK1K9A60F,S4X Toshiba Semiconductor and Storage, N-Channel 600V 3.7A (Ta) 30W (Tc) Through Hole TO-220SIS, U-MOSIX
View
BSP129H6906XTSA1 Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS™
View
FQP50N06 ON Semiconductor, N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3, QFET®
View
IPSA70R1K2P7SAKMA1 Infineon Technologies, N-Channel 700V 4.5A (Tc) 25W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
View
TPN8R903NL,LQ Toshiba Semiconductor and Storage, N-Channel 30V 20A (Tc) 700mW (Ta), 22W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
View
SVD5867NLT4G ON Semiconductor, N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3,
View
IPN60R600P7SATMA1 Infineon Technologies, N-Channel 600V 6A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
IRLB8721PBF Infineon Technologies, N-Channel 30V 62A (Tc) 65W (Tc) Through Hole TO-220AB, HEXFET®
View
R6030KNZC8 - Tags
English
