Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN5900CNH
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	59mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 75V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 39W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

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SI2304BDS-T1-GE3	Vishay Siliconix, N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
STW45N65M5	STMicroelectronics, N-Channel 650V 35A (Tc) 210W (Tc) Through Hole TO-247, MDmesh™ V	View
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IPD80R1K2P7ATMA1	Infineon Technologies, N-Channel 800V 4.5A (Tc) 37W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
DMN3042L-7	Diodes Incorporated, N-Channel 30V 5.8A (Ta) 720mW (Ta) Surface Mount SOT-23,	View
IRFBC40ASPBF	Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D2PAK,	View
IPT111N20NFDATMA1	Infineon Technologies, N-Channel 200V 96A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™	View
IXFN36N60	IXYS, N-Channel 600V 36A (Tc) 520W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
DMN2028USS-13	Diodes Incorporated, N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO,	View
IPD60R400CEAUMA1	Infineon Technologies, N-Channel 600V 14.7A (Tc) 112W (Tc) Surface Mount PG-TO252, CoolMOS™ CE	View
IXTQ36N30P	IXYS, N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-3P, PolarHT™	View

TPN5900CNH,L1Q

Part NumberTPN5900CNH,L1Q