TK14G65W,RQ
TK14G65W,RQ
Part Number TK14G65W,RQ
Description MOSFET N-CH 650V 13.7A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK
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TK14G65W,RQ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK14G65W
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 300V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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