Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA14DP-T1-GE3

SIRA14DP-T1-GE3

SIRA14DP-T1-GE3

Part NumberSIRA14DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 58A PPAK SO-8

DatasheetSIRA14DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA14DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA14DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA14DP-T1-GE3.
We are offering SIRA14DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA14DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA14DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1450pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 31.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA14DP-T1-GE3 - Related Products

	RTQ020N03TR	Rohm Semiconductor, N-Channel 30V 2A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	IPD30N03S2L20ATMA1	Infineon Technologies, N-Channel 30V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3-11, OptiMOS™	View
	PSMN017-80PS,127	Nexperia USA Inc., N-Channel 80V 50A (Tc) 103W (Tc) Through Hole TO-220AB,	View
	VS-FB190SA10	Vishay Semiconductor Diodes Division, N-Channel 100V 190A 568W (Tc) Chassis Mount SOT-227,	View
	NTD20N06LT4G	ON Semiconductor, N-Channel 60V 20A (Ta) 1.36W (Ta), 60W (Tj) Surface Mount DPAK,	View
	IRFS3207ZTRRPBF	Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263), HEXFET®	View
	IRLML0040TRPBF	Infineon Technologies, N-Channel 40V 3.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	TK100E08N1,S1X	Toshiba Semiconductor and Storage, N-Channel 80V 100A (Ta) 255W (Tc) Through Hole TO-220, U-MOSVIII-H	View
	IRFBC20STRLPBF	Vishay Siliconix, N-Channel 600V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,	View
	FCP110N65F	ON Semiconductor, N-Channel 650V 35A (Tc) 357W (Tc) Through Hole TO-220-3, FRFET®, SuperFET® II	View
	IRLS3036TRLPBF	Infineon Technologies, N-Channel 60V 195A (Tc) 380W (Tc) Surface Mount D2PAK, HEXFET®	View
	SQD25N06-22L_T4GE3	Vishay Siliconix, N-Channel 60V 25A (Tc) 62W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View

SIRA14DP-T1-GE3 - Tags

SIRA14DP-T1-GE3 SIRA14DP-T1-GE3 PDF SIRA14DP-T1-GE3 datasheet SIRA14DP-T1-GE3 specification SIRA14DP-T1-GE3 image SIRA14DP-T1-GE3 India Renesas Electronics India SIRA14DP-T1-GE3 buy SIRA14DP-T1-GE3 SIRA14DP-T1-GE3 price SIRA14DP-T1-GE3 distributor SIRA14DP-T1-GE3 supplier SIRA14DP-T1-GE3 wholesales