Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PMZ390UN
Standard Package	10000
Manufacturer	Nexperia USA Inc.
Series	TrenchMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1.78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.89nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	43pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006-3
Package / Case	SC-101, SOT-883

SI1302DL-T1-GE3	Vishay Siliconix, N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3, TrenchFET®	View
IRFI820GPBF	Vishay Siliconix, N-Channel 500V 2.1A (Tc) 30W (Tc) Through Hole TO-220-3,	View
DMN53D0L-7	Diodes Incorporated, N-Channel 50V 500mA (Ta) 370mW (Ta) Surface Mount SOT-23,	View
SI1302DL-T1-GE3	Vishay Siliconix, N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3, TrenchFET®	View
PSMN2R8-80BS,118	Nexperia USA Inc., N-Channel 80V 120A (Tc) 306W (Tc) Surface Mount D2PAK,	View
IXTQ180N10T	IXYS, N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO-3P, TrenchMV™	View
SI7850DP-T1-E3	Vishay Siliconix, N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
IXFP4N60P3	IXYS, N-Channel 600V 4A (Tc) 114W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™	View
TK12E80W,S1X	Toshiba Semiconductor and Storage, N-Channel 800V 11.5A (Ta) 165W (Tc) Through Hole TO-220, DTMOSIV	View
SI8424CDB-T1-E1	Vishay Siliconix, N-Channel 8V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
AOTF4N60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 4A (Tc) 35W (Tc) Through Hole TO-220F,	View
IXFX180N25T	IXYS, N-Channel 250V 180A (Tc) 1390W (Tc) Through Hole PLUS247™-3, GigaMOS™	View

PMZ390UN,315

Part NumberPMZ390UN,315