PMV30UN2R
PMV30UN2R
Part Number PMV30UN2R Description MOSFET N-CH 20V SOT23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
To learn about the specification of PMV30UN2R, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add PMV30UN2R with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of PMV30UN2R.
We are offering PMV30UN2R for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
PMV30UN2R - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PMV30UN2 Standard Package 3000 Manufacturer Nexperia USA Inc. Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 32mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V FET Feature - Power Dissipation (Max) 490mW (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3
PMV30UN2R - Related ProductsMore >>
FDS86106 ON Semiconductor, N-Channel 100V 3.4A (Ta) 5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
TK290P65Y,RQ Toshiba Semiconductor and Storage, N-Channel 650V 11.5A (Tc) 100W (Tc) Surface Mount DPAK, DTMOSV
View
IRF7862TRPBF Infineon Technologies, N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IPP50R140CPXKSA1 Infineon Technologies, N-Channel 550V 23A (Tc) 192W (Tc) Through Hole PG-TO220-3, CoolMOS™
View
SI5476DU-T1-GE3 Vishay Siliconix, N-Channel 60V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-PowerPak® ChipFet (3x1.9), TrenchFET®
View
IXTT2N170D2 IXYS, N-Channel 1700V 2A (Tj) 568W (Tc) Surface Mount TO-268,
View
FQP19N20C ON Semiconductor, N-Channel 200V 19A (Tc) 139W (Tc) Through Hole TO-220-3, QFET®
View
FDV305N ON Semiconductor, N-Channel 20V 900mA (Ta) 350mW (Ta) Surface Mount SOT-23, PowerTrench®
View
IRF200S234 Infineon Technologies, N-Channel 200V 90A 417W (Tc) Surface Mount D2PAK,
View
SI2312BDS-T1-GE3 Vishay Siliconix, N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
PSMN3R3-80BS,118 Nexperia USA Inc., N-Channel 80V 120A (Tc) 306W (Tc) Surface Mount D2PAK,
View
STL10N65M2 STMicroelectronics, N-Channel 650V 4.5A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV,
View
PMV30UN2R - Tags
English
