PMFPB8032XP,115
PMFPB8032XP,115
Part Number PMFPB8032XP,115
Description MOSFET P-CH 20V 2.7A HUSON6
Package / Case 6-UDFN Exposed Pad
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2)
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PMFPB8032XP,115 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PMFPB8032XP
Standard Package 1
Manufacturer Nexperia USA Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 102mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 485mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-HUSON-EP (2x2)
Package / Case 6-UDFN Exposed Pad
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