PMDT670UPE,115


PMDT670UPE,115

Part NumberPMDT670UPE,115

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PMDT670UPE,115 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101, TrenchMOS™
PackagingCut Tape (CT)
Part StatusActive
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C550mA
Rds On (Max) @ Id, Vgs850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds87pF @ 10V
Power - Max330mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-666

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PMDT670UPE,115 - Tags

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