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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet PBSS4160DPN
Standard Package 3000
Manufacturer Nexperia USA Inc.
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 870mA, 770mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V / 150 @ 500mA, 5V
Power - Max 420mW
Frequency - Transition 220MHz, 185MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package 6-TSOP
Base Part Number PBSS4160DPN
PUMZ2,125
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 100MHz, 190MHz 300mW Surface Mount 6-TSSOP,
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SLA6024
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BC817RAPNZ
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 45V 500mA 100MHz 350mW Surface Mount DFN1412-6,
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DMG204B10R
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Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 300mW Surface Mount SOT-666,
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Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6,
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ECH8501-TL-H
ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 30V 5A 280MHz 1.6W Surface Mount 8-ECH,
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