Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ NVD3055L170T4G

NVD3055L170T4G

NVD3055L170T4G

Part NumberNVD3055L170T4G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 9A DPAK

DatasheetNTD3055L170

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 9A (Ta) 1.5W (Ta) Surface Mount DPAK

To learn about the specification of NVD3055L170T4G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NVD3055L170T4G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NVD3055L170T4G.
We are offering NVD3055L170T4G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NVD3055L170T4G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTD3055L170
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	170mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	275pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

NVD3055L170T4G - Related Products

	CSD19502Q5B	Texas Instruments, N-Channel 80V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	TPH4R50ANH,L1Q	Toshiba Semiconductor and Storage, N-Channel 100V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	IXFH52N30Q	IXYS, N-Channel 300V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	IPA60R099C6XKSA1	Infineon Technologies, N-Channel 600V 37.9A (Tc) 35W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	IXFB100N50P	IXYS, N-Channel 500V 100A (Tc) 1890W (Tc) Through Hole PLUS264™, HiPerFET™, PolarHT™	View
	IRL100HS121	Infineon Technologies, N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2),	View
	SQJ850EP-T1_GE3	Vishay Siliconix, N-Channel 60V 24A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SIHB22N65E-GE3	Vishay Siliconix, N-Channel 650V 22A (Tc) 227W (Tc) Surface Mount D2PAK,	View
	IPB123N10N3GATMA1	Infineon Technologies, N-Channel 100V 58A (Tc) 94W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	BS170-D26Z	ON Semiconductor, N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3,	View
	NTMFS4837NHT1G	ON Semiconductor, N-Channel 30V 10.2A (Ta), 75A (Tc) 880mW (Ta), 48W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	STD6NF10T4	STMicroelectronics, N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™	View

NVD3055L170T4G - Tags

NVD3055L170T4G NVD3055L170T4G PDF NVD3055L170T4G datasheet NVD3055L170T4G specification NVD3055L170T4G image NVD3055L170T4G India Renesas Electronics India NVD3055L170T4G buy NVD3055L170T4G NVD3055L170T4G price NVD3055L170T4G distributor NVD3055L170T4G supplier NVD3055L170T4G wholesales