CSD16327Q3
CSD16327Q3
Part Number CSD16327Q3 Description MOSFET N-CH 25V 60A 8SON Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
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CSD16327Q3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD16327Q3 Datasheet Standard Package 1 Manufacturer Texas Instruments Series NexFET™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 3V, 8V Rds On (Max) @ Id, Vgs 4mOhm @ 24A, 8V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V Vgs (Max) +10V, -8V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 12.5V FET Feature - Power Dissipation (Max) 3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-VSON-CLIP (3.3x3.3) Package / Case 8-PowerTDFN
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