NTD5867NLT4G
NTD5867NLT4G
Part Number NTD5867NLT4G
Description MOSFET N-CH 60V 20A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 20A (Tc) 36W (Tc) Surface Mount DPAK
To learn about the specification of NTD5867NLT4G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NTD5867NLT4G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NTD5867NLT4G.
We are offering NTD5867NLT4G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NTD5867NLT4G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTD5867NL
Standard Package 2500
Manufacturer ON Semiconductor
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5867NLT4G - Related ProductsMore >>
IPP100N08S2L07AKSA1
Infineon Technologies, N-Channel 75V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1, OptiMOS™
View
TK14G65W,RQ
Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK, DTMOSIV
View
IRLU024NPBF
Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Through Hole IPAK (TO-251), HEXFET®
View
IRFB4110GPBF
Infineon Technologies, N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®
View
SIHP4N80E-GE3
Vishay Siliconix, N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole TO-220AB,
View
NVMTS0D4N04CLTXG
ON Semiconductor, N-Channel 40V 553.8A (Tc) 5W (Ta) Surface Mount, Wettable Flank 8-DFNW (8.3x8.4), Automotive, AEC-Q101
View
IRFIBE20GPBF
Vishay Siliconix, N-Channel 800V 1.4A (Tc) 30W (Tc) Through Hole TO-220-3,
View
STD10NM60N
STMicroelectronics, N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK, MDmesh™ II
View
BSP372NH6327XTSA1
Infineon Technologies, N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, OptiMOS™
View
STB13N80K5
STMicroelectronics, N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D2PAK, SuperMESH5™
View
FDS2672
ON Semiconductor, N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, UltraFET™
View
DMN10H120SFG-7
Diodes Incorporated, N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,
View
NTD5867NLT4G - Tags