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NTD4808N-1G

NTD4808N-1G

Part NumberNTD4808N-1G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 30V 9.8A IPAK

DatasheetNTD4808N, NVD4808N

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 10A (Ta), 63A (Tc) 1.4W (Ta), 54.6W (Tc) Through Hole I-PAK

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NTD4808N-1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTD4808N, NVD4808N
Standard Package	75
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 11.5V
Rds On (Max) @ Id, Vgs	8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1538pF @ 12V
FET Feature	-
Power Dissipation (Max)	1.4W (Ta), 54.6W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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