NSVT65011MW6T1G

Part NumberNSVT65011MW6T1G

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	NST65011MW6
Standard Package	1
Manufacturer	ON Semiconductor
Series	Automotive, AEC-Q101
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	65V
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Power - Max	380mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88 (SOT-363)

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MBT3904DW1T3G	ON Semiconductor, Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 200mA 300MHz 150mW Surface Mount SC-88/SC70-6/SOT-363,	View
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MMDT5551-TP	Micro Commercial Co, Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SOT-363,	View
SMA4032	Sanken, Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 100V 3A 40MHz 4W Through Hole 12-SIP,	View
STA412A	Sanken, Bipolar (BJT) Transistor Array 4 NPN (Quad) 60V 3A 4W Through Hole 10-SIP,	View