HN1C01FYTE85LF

Part NumberHN1C01FYTE85LF

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	HN1C01F
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 6V
Power - Max	300mW
Frequency - Transition	80MHz
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SM6

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