NSVMUN531335DW1T1G


NSVMUN531335DW1T1G

Part NumberNSVMUN531335DW1T1G

Manufacturer

Description

Datasheet

Package / Case6-TSSOP, SC-88, SOT-363

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Lead TimeTo be Confirmed

Detailed Description

NSVMUN531335DW1T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
PackagingCut Tape (CT)
Part StatusActive
Transistor Type1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms, 2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max187mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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NSVMUN531335DW1T1G - Tags

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