NSVIMD10AMT1G


NSVIMD10AMT1G

Part NumberNSVIMD10AMT1G

Manufacturer

Description

Datasheet

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSVIMD10AMT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
PackagingCut Tape (CT)
Part StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)13kOhms, 130Ohms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V / 68 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max285mW
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSC-74R

NSVIMD10AMT1G - Related Products

More >>
PRMD2Z Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA 230MHz 480mW Surface Mount DFN1412-6, Automotive, AEC-Q101 View
PBLS2001D,115 Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 1A 185MHz 600mW Surface Mount 6-TSOP, View
DME914C10R Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 300MHz 125mW Surface Mount SSMini6-F3-B, View
RN4608(TE85L,F) Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6, View
NSVMUN5332DW1T1G ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363, View
PBLS2002D,115 Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 1A 185MHz 600mW Surface Mount 6-TSOP, View
EMD4DXV6T1G ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563, View
EMD3T2R Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6, View
DMG264020R Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini6-G4-B, View
EMD29T2R Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 250MHz, 260MHz 120mW Surface Mount EMT6, View
RN4602TE85LF Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6, View
IMD6AT108 Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6, View

NSVIMD10AMT1G - Tags

NSVIMD10AMT1G NSVIMD10AMT1G PDF NSVIMD10AMT1G datasheet NSVIMD10AMT1G specification NSVIMD10AMT1G image NSVIMD10AMT1G India Renesas Electronics India NSVIMD10AMT1G buy NSVIMD10AMT1G NSVIMD10AMT1G price NSVIMD10AMT1G distributor NSVIMD10AMT1G supplier NSVIMD10AMT1G wholesales