NSVMMBT6520LT1G


NSVMMBT6520LT1G

Part NumberNSVMMBT6520LT1G

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSVMMBT6520LT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Power - Max225mW
Frequency - Transition200MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

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NSVMMBT6520LT1G - Tags

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