BD676G


BD676G

Part NumberBD676G

Manufacturer

Description

Datasheet

Package / CaseTO-225AA, TO-126-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BD676G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package500
ManufacturerON Semiconductor
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Power - Max40W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-225AA
Base Part NumberBD676

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