NSBC114YPDXV6T1G

Part NumberNSBC114YPDXV6T1G

ManufacturerON Semiconductor

DescriptionTRANS PREBIAS NPN/PNP SOT563

DatasheetMUN5314DW1, NSBC114YPDxx

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

To learn about the specification of NSBC114YPDXV6T1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NSBC114YPDXV6T1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NSBC114YPDXV6T1G.
We are offering NSBC114YPDXV6T1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NSBC114YPDXV6T1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	MUN5314DW1, NSBC114YPDxx
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	500mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-563
Base Part Number	NSBC1*

NSBC114YPDXV6T1G - Related Products

More >>

RN4608(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
UMD12NTR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6,	View
IMD3AT108	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6,	View
PUMD16,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
PBLS2004D,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 1A 185MHz 600mW Surface Mount 6-TSOP,	View
DMG264H00R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA, 500mA 300mW Surface Mount Mini6-G4-B,	View
DMG563H10R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
UMD12NTR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6,	View
EMD2T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6,	View
DCX114YU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
PBLS6002D,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA, 700mA 185MHz 600mW Surface Mount 6-TSOP,	View
DMG564H30R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B,	View

NSBC114YPDXV6T1G - Tags

NSBC114YPDXV6T1G NSBC114YPDXV6T1G PDF NSBC114YPDXV6T1G datasheet NSBC114YPDXV6T1G specification NSBC114YPDXV6T1G image NSBC114YPDXV6T1G India Renesas Electronics India NSBC114YPDXV6T1G buy NSBC114YPDXV6T1G NSBC114YPDXV6T1G price NSBC114YPDXV6T1G distributor NSBC114YPDXV6T1G supplier NSBC114YPDXV6T1G wholesales