NSVMUN5312DW1T2G

Part NumberNSVMUN5312DW1T2G

ManufacturerON Semiconductor

DescriptionTRANS NPN/PNP 50V BIPO SC88-6

DatasheetMUN5312DW1, NSBC124EPDxx

Package / Case6-TSSOP, SC-88, SOT-363

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Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

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NSVMUN5312DW1T2G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	MUN5312DW1, NSBC124EPDxx
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

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