Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	NGTB40N65IHL2WG
Standard Package	30
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	160A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A
Power - Max	300W
Switching Energy	360µJ (off)
Input Type	Standard
Gate Charge	135nC
Td (on/off) @ 25°C	-/140ns
Test Condition	400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	465ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

STGB30H60DLFB	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK,	View
FGB40T65SPD-F085	ON Semiconductor, IGBT Trench Field Stop 650V 80A 267W Surface Mount TO-263AB (D²PAK),	View
APT25GP120BDQ1G	Microsemi Corporation, IGBT PT 1200V 69A 417W Through Hole TO-247 [B], POWER MOS 7®	View
IXXH30N65B4	IXYS, IGBT PT 650V 65A 230W Through Hole TO-247 (IXXH), GenX4™, XPT™	View
APT35GN120BG	Microsemi Corporation, IGBT NPT, Trench Field Stop 1200V 94A 379W Through Hole TO-247 [B],	View
RGT16BM65DTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 16A 94W Surface Mount TO-252,	View
HGTG11N120CND	ON Semiconductor, IGBT NPT 1200V 43A 298W Through Hole TO-247-3,	View
FGB40T65SPD-F085	ON Semiconductor, IGBT Trench Field Stop 650V 80A 267W Surface Mount TO-263AB (D²PAK),	View
IXBF20N360	IXYS, IGBT 3600V 45A 230W Through Hole ISOPLUS i4-PAC™, BIMOSFET™	View
IXYH40N120C3D1	IXYS, IGBT 1200V 64A 480W Through Hole TO-247 (IXYH), GenX3™, XPT™	View
IRG4PH40UDPBF	Infineon Technologies, IGBT 1200V 41A 160W Through Hole TO-247AC,	View
RGW80TK65GVC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 39A 81W Through Hole TO-3PFM,	View

NGTB40N65IHL2WG

Part NumberNGTB40N65IHL2WG