Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	NGTB40N120FL2WG
Standard Package	30
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	200A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Power - Max	535W
Switching Energy	3.4mJ (on), 1.1mJ (off)
Input Type	Standard
Gate Charge	313nC
Td (on/off) @ 25°C	116ns/286ns
Test Condition	600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	240ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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STGW20NC60VD	STMicroelectronics, IGBT 600V 60A 200W Through Hole TO-247-3, PowerMESH™	View
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FGH12040WD-F155	ON Semiconductor, IGBT Trench Field Stop 1200V 80A 428W Through Hole TO-247-3,	View
IKZ50N65NH5XKSA1	Infineon Technologies, IGBT Trench 650V 85A 273W Through Hole PG-TO247-4, TrenchStop™ 5	View
IXYH100N65C3	IXYS, IGBT PT 650V 200A 830W Through Hole TO-247 (IXYH), GenX3™, XPT™	View
IKW40N120T2FKSA1	Infineon Technologies, IGBT Trench 1200V 75A 480W Through Hole PG-TO247-3, TrenchStop®	View

NGTB40N120FL2WG

Part NumberNGTB40N120FL2WG