MT3S113(TE85L,F)
MT3S113(TE85L,F)
Part Number MT3S113(TE85L,F) Description RF TRANS NPN 5.3V 12.5GHZ SMINI Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini
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MT3S113(TE85L,F) - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet MT3S113 Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series - Packaging Cut Tape (CT) Part Status Active Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5.3V Frequency - Transition 12.5GHz Noise Figure (dB Typ @ f) 1.45dB @ 1GHz Gain 11.8dB Power - Max 800mW DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package S-Mini
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