MJE3055T
MJE3055T
Part Number MJE3055T Description TRANS NPN 60V 10A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 60V 10A 2MHz 75W Through Hole TO-220AB
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MJE3055T - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJE2955T, MJE3055T Standard Package 50 Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V Power - Max 75W Frequency - Transition 2MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Base Part Number MJE3055
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BD441G ON Semiconductor, Bipolar (BJT) Transistor NPN 80V 4A 3MHz 36W Through Hole TO-225AA,
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NST847BF3T5G ON Semiconductor, Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 290mW Surface Mount SOT-1123,
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PBSS4630PA,115 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 30V 6A 115MHz 2.1W Surface Mount 3-HUSON (2x2),
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ZXTN25060BFHTA Diodes Incorporated, Bipolar (BJT) Transistor NPN 60V 3.5A 185MHz 1.25W Surface Mount SOT-23-3,
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BC33716TA ON Semiconductor, Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92-3,
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DSC2001Q0L Panasonic Electronic Components, Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 200mW Surface Mount Mini3-G3-B,
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MMBT2484LT1G ON Semiconductor, Bipolar (BJT) Transistor NPN 60V 100mA 225mW Surface Mount SOT-23-3 (TO-236),
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