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MJ11012G

MJ11012G

Part NumberMJ11012G

ManufacturerON Semiconductor

DescriptionTRANS NPN DARL 60V 30A TO-3

DatasheetMJ11012,15,16

Package / CaseTO-204AA, TO-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)

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MJ11012G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJ11012,15,16
Standard Package	100
Manufacturer	ON Semiconductor
Series	-
Packaging	Tray
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	30A
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	4V @ 300mA, 30A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V
Power - Max	200W
Frequency - Transition	4MHz
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Supplier Device Package	TO-204 (TO-3)

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