MJ11012G


MJ11012G

Part NumberMJ11012G

Manufacturer

Description

Datasheet

Package / CaseTO-204AA, TO-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJ11012G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package100
ManufacturerON Semiconductor
Series-
PackagingTray
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)30A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A, 5V
Power - Max200W
Frequency - Transition4MHz
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-204 (TO-3)

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