MJE15032G


MJE15032G

Part NumberMJE15032G

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJE15032G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package50
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)8A
Voltage - Collector Emitter Breakdown (Max)250V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 2A, 5V
Power - Max2W
Frequency - Transition30MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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