Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTY1R6N100D2

IXTY1R6N100D2

IXTY1R6N100D2

Part NumberIXTY1R6N100D2

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 1.6A DPAK

DatasheetIXT(Y,A,P)1R6N100D2

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount TO-252, (D-Pak)

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IXTY1R6N100D2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(Y,A,P)1R6N100D2
Standard Package	70
Manufacturer	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	27nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	645pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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