IXTX32P60P
IXTX32P60P
Part Number IXTX32P60P Manufacturer IXYS Description MOSFET P-CH 600V 32A PLUS247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 600V 32A (Tc) 890W (Tc) Through Hole PLUS247™-3
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IXTX32P60P - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(K,X)32P60P Standard Package 30 Manufacturer IXYS Series PolarP™ Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11100pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3
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