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IXTX32P60P

IXTX32P60P

Part NumberIXTX32P60P

ManufacturerIXYS

DescriptionMOSFET P-CH 600V 32A PLUS247

DatasheetIXT(K,X)32P60P

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 600V 32A (Tc) 890W (Tc) Through Hole PLUS247™-3

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IXTX32P60P - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(K,X)32P60P
Standard Package	30
Manufacturer	IXYS
Series	PolarP™
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	196nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11100pF @ 25V
FET Feature	-
Power Dissipation (Max)	890W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS247™-3
Package / Case	TO-247-3

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