IXTX120N65X2
IXTX120N65X2
Part Number IXTX120N65X2
Manufacturer IXYS
Description MOSFET N-CH 650V 120A PLUS247
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 120A (Tc) 1250W (Tc) Through Hole PLUS247™-3
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IXTX120N65X2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(K,X)120N65X2
Standard Package 30
Manufacturer IXYS
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V
FET Feature -
Power Dissipation (Max) 1250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3
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