IXTQ26N50P


IXTQ26N50P

Part NumberIXTQ26N50P

Manufacturer

Description

Datasheet

Package / CaseTO-3P-3, SC-65-3

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Lead TimeTo be Confirmed

Detailed Description

IXTQ26N50P - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerIXYS
SeriesPolarHV™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs230mOhm @ 13A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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