IXTP6N100D2


IXTP6N100D2

Part NumberIXTP6N100D2

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXTP6N100D2 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package50
ManufacturerIXYS
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs95nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2650pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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IXTP6N100D2 - Tags

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