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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_210
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS9N60APBF
Vishay Siliconix, N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D2PAK,
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IXFH26N60P
IXYS, N-Channel 600V 26A (Tc) 460W (Tc) Through Hole TO-247AD (IXFH), PolarHV™
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VN10KN3-G-P002
Microchip Technology, N-Channel 60V 310mA (Tj) 1W (Tc) Through Hole TO-92-3,
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STD25NF10LT4
STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II
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IXFH270N06T3
IXYS, N-Channel 60V 270A (Tc) 480W (Tc) Through Hole TO-247, HiperFET™, TrenchT3™
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BUK969R0-60E,118
Nexperia USA Inc., N-Channel 60V 75A (Tc) 137W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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BSC077N12NS3GATMA1
Infineon Technologies, N-Channel 120V 13.4A (Ta), 98A (Tc) 139W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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IPSA70R750P7SAKMA1
Infineon Technologies, N-Channel 700V 6.5A (Tc) 34.7W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
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SIS412DN-T1-GE3
Vishay Siliconix, N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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FDPF33N25T
ON Semiconductor, N-Channel 250V 33A (Tc) 37W (Tc) Through Hole TO-220F, UniFET™
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SUM90330E-GE3
Vishay Siliconix, N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak), ThunderFET®
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FDB86102LZ
ON Semiconductor, N-Channel 100V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263AB, PowerTrench®
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